000			03035nam a22004815i 4500
001			978-3-642-04830-2
003			DE-He213
005			20140220084527.0
007			cr nn 008mamaa
008			100623s2010 gw | s |||| 0|eng d
020			_a9783642048302 _9978-3-642-04830-2
024	7		_a10.1007/978-3-642-04830-2 _2doi
050		4	_aQD901-999
072		7	_aPHFC _2bicssc
072		7	_aSCI016000 _2bisacsh
082	0	4	_a548 _223
100	1		_aEhrentraut, Dirk. _eeditor.
245	1	0	_aTechnology of Gallium Nitride Crystal Growth _h[electronic resource] / _cedited by Dirk Ehrentraut, Elke Meissner, Michal Bockowski.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2010.
300			_aXX, 334p. 400 illus., 200 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringer Series in Materials Science, _x0933-033X ; _v133
505	0		_aMarket for Bulk GaN Crystals -- Development of the Bulk GaN Substrate Market -- Vapor Phase Growth Technology -- Hydride Vapor Phase Epitaxy of GaN -- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds -- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- Nonpolar and Semipolar GaN Growth by HVPE -- High Growth Rate MOVPE -- Solution Growth Technology -- Ammonothermal Growth of GaN Under Ammono-Basic Conditions -- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method -- Acidic Ammonothermal Growth Technology for GaN -- Flux Growth Technology -- High Pressure Solution Growth of Gallium Nitride -- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal -- Low Pressure Solution Growth of Gallium Nitride -- Characterization of GaN Crystals -- Optical Properties of GaN Substrates -- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.
520			_aThis book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
650		0	_aPhysics.
650		0	_aCrystallography.
650		0	_aOptical materials.
650	1	4	_aPhysics.
650	2	4	_aCrystallography.
650	2	4	_aOptical and Electronic Materials.
700	1		_aMeissner, Elke. _eeditor.
700	1		_aBockowski, Michal. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783642048289
830		0	_aSpringer Series in Materials Science, _x0933-033X ; _v133
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-642-04830-2
912			_aZDB-2-PHA
999			_c111648 _d111648