000 04384nam a22005535i 4500
001 978-1-4614-1812-2
003 DE-He213
005 20140220083243.0
007 cr nn 008mamaa
008 111129s2012 xxu| s |||| 0|eng d
020 _a9781461418122
_9978-1-4614-1812-2
024 7 _a10.1007/978-1-4614-1812-2
_2doi
050 4 _aTK7800-8360
050 4 _aTK7874-7874.9
072 7 _aTJF
_2bicssc
072 7 _aTEC008000
_2bisacsh
072 7 _aTEC008070
_2bisacsh
082 0 4 _a621.381
_223
100 1 _aHe, Ming.
_eauthor.
245 1 0 _aMetal-Dielectric Interfaces in Gigascale Electronics
_h[electronic resource] :
_bThermal and Electrical Stability /
_cby Ming He, Toh-Ming Lu.
264 1 _aNew York, NY :
_bSpringer New York,
_c2012.
300 _aXI, 149p. 120 illus., 48 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Series in Materials Science,
_x0933-033X ;
_v157
505 0 _aPreface -- 1. Introduction -- 2. Metal-Dielectric Diffusion Processes: Fundamentals -- 3. Experimental Techniques -- 4. Al-Dielectric Interfaces -- 5. Cu-Dielectric Interfaces -- 6. Barrier Metal-Dielectric Interfaces -- 7. Self-Forming Barriers. 8. Kinetics of Ion Drift -- 9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions.
520 _aMetal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces
650 0 _aEngineering.
650 0 _aChemistry.
650 0 _aElectronics.
650 0 _aOptical materials.
650 1 4 _aEngineering.
650 2 4 _aElectronics and Microelectronics, Instrumentation.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aSurface and Interface Science, Thin Films.
650 2 4 _aNanotechnology and Microengineering.
650 2 4 _aElectrochemistry.
650 2 4 _aEngineering Thermodynamics, Heat and Mass Transfer.
700 1 _aLu, Toh-Ming.
_eauthor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9781461418115
830 0 _aSpringer Series in Materials Science,
_x0933-033X ;
_v157
856 4 0 _uhttp://dx.doi.org/10.1007/978-1-4614-1812-2
912 _aZDB-2-PHA
999 _c101137
_d101137