Library Services | Technical University of Kenya

Your cart is empty.
Normal view MARC view ISBD view

Technology of Gallium Nitride Crystal Growth [electronic resource] / edited by Dirk Ehrentraut, Elke Meissner, Michal Bockowski.

By: Ehrentraut, Dirk [editor.].
Contributor(s): Meissner, Elke [editor.] | Bockowski, Michal [editor.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Springer Series in Materials Science: 133Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010Description: XX, 334p. 400 illus., 200 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783642048302.Subject(s): Physics | Crystallography | Optical materials | Physics | Crystallography | Optical and Electronic MaterialsDDC classification: 548 Online resources: Click here to access online
Contents:
Market for Bulk GaN Crystals -- Development of the Bulk GaN Substrate Market -- Vapor Phase Growth Technology -- Hydride Vapor Phase Epitaxy of GaN -- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds -- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- Nonpolar and Semipolar GaN Growth by HVPE -- High Growth Rate MOVPE -- Solution Growth Technology -- Ammonothermal Growth of GaN Under Ammono-Basic Conditions -- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method -- Acidic Ammonothermal Growth Technology for GaN -- Flux Growth Technology -- High Pressure Solution Growth of Gallium Nitride -- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal -- Low Pressure Solution Growth of Gallium Nitride -- Characterization of GaN Crystals -- Optical Properties of GaN Substrates -- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.
In: Springer eBooksSummary: This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Market for Bulk GaN Crystals -- Development of the Bulk GaN Substrate Market -- Vapor Phase Growth Technology -- Hydride Vapor Phase Epitaxy of GaN -- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds -- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- Nonpolar and Semipolar GaN Growth by HVPE -- High Growth Rate MOVPE -- Solution Growth Technology -- Ammonothermal Growth of GaN Under Ammono-Basic Conditions -- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method -- Acidic Ammonothermal Growth Technology for GaN -- Flux Growth Technology -- High Pressure Solution Growth of Gallium Nitride -- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal -- Low Pressure Solution Growth of Gallium Nitride -- Characterization of GaN Crystals -- Optical Properties of GaN Substrates -- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

There are no comments for this item.

Log in to your account to post a comment.

2017 | The Technical University of Kenya Library | +254(020) 2219929, 3341639, 3343672 | library@tukenya.ac.ke | Haile Selassie Avenue