Self-Organized Quantum Dots for Memories (Record no. 92783)

000 -LEADER
fixed length control field 03572nam a22005055i 4500
001 - CONTROL NUMBER
control field 978-3-319-01970-3
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220082510.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 130930s2014 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319019703
-- 978-3-319-01970-3
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-319-01970-3
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9-611.8
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD5
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008090
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Nowozin, Tobias.
Relator term author.
245 10 - TITLE STATEMENT
Title Self-Organized Quantum Dots for Memories
Medium [electronic resource] :
Remainder of title Electronic Properties and Carrier Dynamics /
Statement of responsibility, etc by Tobias Nowozin.
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2014.
300 ## - PHYSICAL DESCRIPTION
Extent XVI, 153 p. 91 illus., 9 illus. in color.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
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-- computer
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-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement Springer Theses, Recognizing Outstanding Ph.D. Research,
International Standard Serial Number 2190-5053
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Fundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times.
520 ## - SUMMARY, ETC.
Summary, etc Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.   This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Memory management (Computer science).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronic Circuits and Devices.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology and Microengineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Memory Structures.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783319019697
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Theses, Recognizing Outstanding Ph.D. Research,
-- 2190-5053
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-319-01970-3
912 ## -
-- ZDB-2-PHA

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